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| High Frequency FETs 3SK241 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm 2.8 -0.3 +0.2 +0.2 s Features q Low noise-figure (NF) q Large power gain PG q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.650.15 1.5 -0.3 0.650.15 0.5R 0.95 2.90.2 1.90.2 4 1 0.95 1.1 -0.1 +0.2 Parameter Drain to Source voltage Gate 1 to Source voltage Gate 2 to Source voltage Drain current Gate 1 current Gate 2 current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID IG1 IG2 PD Tch Tstg Ratings 13 -6 -6 50 1 1 200 150 -55 to +150 Unit V V V mA mA mA mW C C 1: Source 2: Drain 3: Gate2 4: Gate1 Mini Type Package (4-pin) Marking Symbol: DU s Electrical Characteristics (Ta = 25C) Parameter Drain to Source cut-off current Gate 2 to Drain current Gate 1 cut-off current Gate 2 cut-off current Drain cut-off current Gate 1 to Source cut-off voltage Gate 2 to Source cut-off voltage Forward transfer admittance Symbol IDSS IG2DO IG1SS IG2SS IDSX VG1SC VG2SC | Yfs | Coss PG NF GR Conditions VDS = 5V, VG1S = 0, VG2S = 0 VG2D = -13V (G1, S = Open) VDS = VG2S = 0, VG1S = -6V VDS = VG1S = 0, VG2S = -6V VDS = 13V, VG1S = -3.5V, VG2S = 0 VDS = 5V, VG2S = 0, ID = 200A VDS = 5V, VG1S = 0, ID = 200A VDS = 5V, ID = 10mA, VG2S = 1.5V, f = 1kHz VDS = 5V, VG1S = VG2S = -6V f = 1MHz VDS = 5V, ID = 10mA VG2S = 1.5V, f = 800MHz VDS = 5V, VAGC = 1.5V/-3.5V, f = 800MHz 37 13 18 23 0.4 0.3 0.02 19 1.5 45 2.5 2 1.2 0.04 min 8.5 typ max 35 50 -20 -20 50 -3.5 -3.5 Unit mA A A A A V V mS pF pF pF dB dB dB Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Power gain Noise figure Gain reduction 0 to 0.1 0.40.2 0.8 0.16 -0.06 s Absolute Maximum Ratings (Ta = 25C) 3 2 +0.1 0.4 -0.05 +0.1 1 High Frequency FETs PD Ta 400 36 VG2S=0 Ta=25C 30 40 VG1S=0V 24 - 0.3V 18 - 0.6V 12 - 0.9V 6 50 -1.2V 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 -2.4 -2.0 -1.6 3SK241 ID VDS 48 VDS=5V Ta=25C VG2S=1.0V 32 0.5V 24 0V ID VG1S Allowable power dissipation PD (mW) 350 Drain current ID (mA) 250 200 150 100 Drain current ID (mA) 300 16 - 0.5V 8 -1.0V -1.2 - 0.8 - 0.4 4 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate 1 to source voltage VG1S (V) ID VG2S 48 VDS=5V Ta=25C 40 48 | Yfs | VG1S Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) Forward transfer admittance |Yfs| (mS) VDS=5V f=1kHz Ta=25C 0.6 Ciss, Coss VDS VG1S=VG2S=-6V f=1MHz Ta=25C 40 0.5 Drain current ID (mA) 32 VG1S=1.0V 24 0.5V 0V 16 - 0.5V 32 VG2S=1.5V 0.4 Ciss 24 0.3 Coss 0.2 16 1.0V 8 0.5V 0V 0 -3 8 - 1.0V 0 -2.4 0.1 -2.0 -1.6 -1.2 - 0.8 - 0.4 0 -2 -1 0 1 2 3 0 0.1 0.3 1 3 10 30 100 Gate 2 to source voltage VG2S (V) Gate 1 to source voltage VG1S (V) Drain to source voltage VDS (V) PG VG1S 24 VG2S=1.5V 12 NF VG1S VDS=5V f=800MHz Ta=25C 60 PG VG2S VDS=5V f=800MHz Ta=25C 20 10 40 Noise figure NF (dB) Power gain PG (dB) 16 8 VG2S=1.5V 1.0V Power gain PG (dB) 20 12 1.0V 8 0.5V 0V 4 VDS=5V f=800MHz Ta=25C -1.2 - 0.8 - 0.4 0 0.4 0.8 6 0.5V 4 0V 2 0 -20 -40 0 -1.6 0 -1.6 -1.2 - 0.8 - 0.4 0 0.4 0.8 -60 -6 -4 -2 0 2 4 6 Gate 1 to source voltage VG1S (V) Gate 1 to source voltage VG1S (V) Gate 2 to source voltage VG2S (V) 2 High Frequency FETs ID VG1S 30 VDS=5V VG2S=0 24 3SK241 Drain current ID (mA) 18 12 Ta=25C 75C 6 -25C 0 -2.0 -1.6 -1.2 - 0.8 - 0.4 0 Gate 1 to source voltage VG1S (V) 3 |
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